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| BAS70-07W Silicon Schottky Diode * General-purpose diode for high-speed switching * Circuit protection * Voltage clamping * High-level detecting and mixing 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS70-07W Marking Ordering Code 77s Q62702-A1186 Pin Configuration Package 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t< 100s) Total power dissipation, T S 91 C Junction temperature Operating temperature range Storage temperature Symbol Value 70 70 100 250 150 - 55 ...+150 - 55 ...+150 mW C Unit V mA VR IF I FSM Ptot Tj T op T stg Maximum Ratings Junction - ambient 1) RthJA RthJS 285 145 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Ma 1998-11-01 -26-1998 BAS70-07W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Breakdown voltage Symbol min. Values typ. 0.1 10 max. V A Unit V(BR) IR 70 - I (BR) = 10 A Reverse current VR = 50 V VR = 70 V Forward voltage VF 300 600 750 375 705 880 410 750 1000 V I F = 1 mA I F = 10 mA I F = 15 mA AC characteristics Diode capacitance CT - 1.5 34 2 2 100 - pF ps nH VR = 0 V, f = 1 MHz Charge carrier life time I F = 25 mA Differential forward resistance rf Ls I F = 10 mA, f = 10 kHz Series inductance Semiconductor Group Semiconductor Group 22 Ma 1998-11-01 -26-1998 BAS70-07W Forward current IF = f (TA*;TS) * Package mounted on epoxy Rectifier voltage Vout = f (Vin) f = 900 MHz RL = parameter in k 10 4 mV 100 mA 10 3 80 IF 70 Vout 10 TS 2 60 50 40 30 20 10 1 TA 10 0 10 -1 1000 500 200 100 50 20 10 -2 10 0 0 10 -3 0 10 1 2 RL=10 20 40 60 80 100 120 C 150 10 10 10 3 mV TA,TS Vin Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 2 K/W IFmax / IFDC - RthJS 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Ma 1998-11-01 -26-1998 BAS70-07W Forward current IF = f (V F) Reverse current IR = f (VR) T A = Parameter 10 2 BAS 70W/BAS 170W EHB00042 TA = Parameter BAS 70W/BAS 170W EHB00043 10 2 F mA 10 1 R A 10 1 TA = 150 C 10 0 85 C 10 0 10 -1 TA = -40 C 25 C 85 C 150 C 10 -1 10 -2 25 C 10 -2 0.0 0.5 1.0 V 1.5 10 -3 0 20 40 60 V 80 VF VR Diode capacitance CT = f (V R) f = 1MHz Differential forward resistance rf = f (IF) f = 10 kHz 2.0 BAS 70W/BAS 170W EHB00044 10 3 BAS 70W/BAS 170W EHB00045 CT pF rf 1.5 10 2 1.0 10 1 0.5 0.0 0 20 40 60 V 80 10 0 0.1 1 10 mA 100 VR F 44 Semiconductor Group Semiconductor Group Ma 1998-11-01 -26-1998 |
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